2sb1188 / 2SB1182 / 2sb1240 transistors medium power transistor ( ? 32v, ? 2a) 2sb1188 / 2SB1182 / 2sb1240 ! ! ! ! features 1) low v ce(sat) . v ce(sat) = ? 0.5v (typ.) (i c /i b = ? 2a / ? 0.2a) 2) complements the 2sd1766 / 2sd1758 / 2sd1862 ! ! ! ! structure epitaxial planar type pnp silicon transistor ! ! ! ! external dimensions (units : mm) (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 2sb1188 2sb1240 2SB1182 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 (1) emitter (2) collector (3) base rohm : atv 1.0 6.8 0.2 2.5 0.2 1.05 0.45 0.1 2.54 2.54 0.5 0.1 0.9 4.4 0.2 14.5 0.5 (1) (2) (3) 0.65max. ? 0.1 + 0.2 ? 0.05 + 0.1 ? 0.1 + 0.2 + 0.2 ? 0.1 (3) (2) (1) 1.0 0.2 0.5 0.1 4.0 0.3 2.5 3.0 0.2 1.5 0.1 1.5 0.1 0.4 0.1 0.5 0.1 0.4 0.1 0.4 1.5 4.5 1.6 0.1 ? 0.1 + 0.2 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 abbreviated symbol: bc ? ? denotes h fe ! ! ! ! absolute maximum ratings (ta=25 c) ? 1 single pulse, p w = 100ms ? 2 when mounted on a 40 40 0.7 mm ceramic board. ? 3 printed circuit board, 1.7mm thick, collector copper plating 100mm 2 or larger. parameter v cbo v ceo v ebo p c tj tstg ? 40 v v v a(dc) w w w(t c = 25 c) w c c ? 32 ? 5 ? 2 i c a(pulse) ? 3 0.5 2 10 1 ? 2 ? 1 ? 3 2sb1188 2SB1182 2sb1240 150 ? 55~ + 150 symbol limits unit collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature
2sb1188 / 2SB1182 / 2sb1240 transistors ! ! ! ! electrical characteristics (ta=25 c) ? measured using pulse current. parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ? 40 ? 32 ? 5 ? ? 82 ? ? ? ? ? ? ? ? 100 50 ? ? ? ? 1 ? 1 390 ? 0.8 ? ? ? ? v i c =? 50 a i c =? 1ma i e =? 50 a v cb =? 20v v eb =? 4v i c /i b =? 2a/ ? 0.2a v ce =? 5v, i e = 0.5a, f = 30mhz v cb =? 10v, i e = 0a, f = 1mhz v v a a ? ? v ce =? 3v, i c =? 0.5a v mhz pf typ. max. unit conditions ? 0.5 collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance ! ! ! ! packaging specifications and h fe package code basic ordering unit (pieces) taping t100 tl 1000 2500 ? ? pqr h fe pqr 2sb1188 2SB1182 ?? tv2 2500 ? ? pqr 2sb1240 type h fe values are classified as follows : item p q r h fe 82~180 120~270 180~390 ! ! ! ! electrical characteristic curves fig.1 grounded emitter propagation characteristics base to emitter voltage : v be (v) collector current : i c (ma) 0 ? 0.2 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 ? 1.8 ? 2.0 ? 2.2 ? 0.4 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1000 v ce =? 3v ta=100 c 25 c ? 40 c fig.2 grounded emitter output characteristics ? 0.4 0 ? 0.8 ? 1.2 ? 1.6 ? 2 0 ? 0.1 ? 0.2 ? 0.3 ? 0.4 ? 0.5 i b = 0a ? 250 a ? 500 a ? 750 a ? 1ma ? 1.25ma ? 1.5ma ? 1.75ma ? 2ma ? 2.25ma ? 2.5ma collector current : i c (a) collector to emitter voltage : v ce (v) ta = 25 c fig.3 dc current gain vs. collector current ( ) dc current gain : h fe ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 50 20 100 200 500 ta = 25 c collector current : i c (ma) v ce =? 6v ? 3v ? 1v
2sb1188 / 2SB1182 / 2sb1240 transistors fig.4 dc current gain vs. collector current ( ? ) 50 20 100 200 500 dc current gain : h fe v ce =? 3v collector current : i c (ma) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ta = 100 c 25 c ? 25 c fig.5 collector-emitter saturation voltage vs. collector current ( ) collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 50 ? 100 ? 200 ? 500 ta = 25 c i c /i b = 50 20 10 fig.6 collector-emitter saturation voltage vs. collector current ( ? ) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 20 ? 50 ? 100 ? 200 ? 500 l c /l b = 10 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) ta = 100 c 25 c ? 40 c fig.7 base-emitter saturation voltage vs. collector current colletor current : i c (ma) base saturation voltage : v be(sat) (v) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 0.1 ? 0.05 ? 0.2 ? 0.5 ? 1 i c /i b = 10 ta = 25 c fig.8 gain bandwidth product vs. emitter current ta = 25 c v ce =? 5v emitter current : i e (ma) transition frequency : f t (mhz) 5 10 20 50 100 500 1000 2000 200 50 100 200 500 fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) ta = 25 c f = 1mhz i e = 0a i c = 0a ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 30 10 20 50 200 300 100 cib cob fig.10 safe operation area (2sb1188) ? 0.5 ? 0.2 ? 0.1 ? 1 ? 2 ? 10 ? 5 ? 20 ? 50 ? 0.01 ? 0.05 ? 0.02 ? 0.1 ? 0.5 ? 0.2 ? 1 ? 2 ? 5 collector current : i c (a) collector to emitter voltage : v ce (v) dc p w = 100ms ? p w = 10ms ? ta = 25 c ? single nonrepetitive pulse i c max. (pulse) fig.11 safe operation area (2SB1182) ? 0.5 ? 0.2 ? 0.1 ? 1 ? 2 ? 10 ? 5 ? 20 ? 50 ? 0.01 ? 0.05 ? 0.02 ? 0.1 ? 0.5 ? 0.2 ? 1 ? 2 ? 5 collector current : i c (a) collector to emitter voltage : v ce (v) ta = 25 c ? single nonrepetitive pulse i c max . (pulse) dc p w = 500 s p w = 100 ms p w = 1ms
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